CMOS structure with varying gate oxide thickness and with both d

Details CMOS structure with varying gate oxide thickness and with both d CMOS structure with varying gate oxide thickness and with both d

1994-12-07

1996-03-05

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257392, H01L 2994

Patent

active

054970210

ABSTRACT:
After forming a gate oxide film on the surface side of a single crystalline silicon substrate, a first polycrystalline silicon layer is subsequently formed. After that, portions of polycrystalline silicon layers are left in each gate electrode formation region of a high voltage drive circuit. Then, the gate oxide film in a low voltage drive circuit side is removed while maintaining this state. Then, after forming a gate oxide film on those surface sides, a polycrystalline silicon layer is subsequently formed in the surface side. After that, impurities are introduced into the polycrystalline silicon layer to provide it with electrical conduction, and then portions of polycrystalline silicon layers are left.

REFERENCES:
patent: 4471373 (1984-09-01), Shimizu et al.
patent: 4975757 (1990-12-01), Egawa et al.

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