Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-25
2000-10-03
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438303, H01L 2978
Patent
active
06127710&
ABSTRACT:
A CMOS Structure is disclosed wherein two adjacent transistors of opposite conductivity each have a gate above their respective channel regions. Spacers are absent from the gate of one of the transistors. The structure is also characterized by lightly doped regions.
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patent: 5409848 (1995-04-01), Han et al.
patent: 5608258 (1997-03-01), Rajkanan et al.
patent: 5696016 (1997-12-01), Chen et al.
Chien Chung-Jen
Choi Jeong Yeol
Han Chung-Chyung
Lien Chuen-Der
Hardy David
Integrated Device Technology Inc.
McAndrews Isabelle R.
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