CMOS static storage cell having noncrossing interconnection cond

Details CMOS static storage cell having noncrossing interconnection cond CMOS static storage cell having noncrossing interconnection cond

1985-07-01

1987-10-27

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365 51, G11C 1100, G11C 502

Patent

active

047034548

ABSTRACT:
The storage cell comprises a bistable element formed from two channel P MOS transistors called first and second transistors, and two channel N MOS transistors, called third and fourth transistors, a fifth and a sixth channel N MOS transistor being used for controlling the bistable element, the different transistors of the cell being electrically interconnected in such a way that the interconnection lines used for connecting them do not cross.

REFERENCES:
patent: 4075690 (1978-02-01), Oberman et al.
patent: 4513398 (1985-04-01), Ngu
patent: 4631705 (1986-12-01), Honda

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