CMOS static ram cell provided with an additional bipolar drive t

Details CMOS static ram cell provided with an additional bipolar drive t CMOS static ram cell provided with an additional bipolar drive t

1986-12-29

1988-10-18

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365177, 365190, G11C 700

Patent

active

047792302

ABSTRACT:
A BIMOS memory cell is formed by providing a CMOS static RAM cell with an additional NPN bipolar transistor to provide additional drive current during the read cycle to improve the read time of the memory cell.

REFERENCES:
patent: 3553541 (1969-04-01), King
patent: 4701883 (1987-10-01), Wrathall et al.

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