CMOS static memory

Details CMOS static memory CMOS static memory

1989-09-01

1991-04-23

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

365190, 365154, G11C 700

Patent

active

050105213

ABSTRACT:
A CMOS static memory includes a memory cell array having a plurality of memory cells two-dimensionally arranged in word and bit line directions, and peripheral circuits including n-type MOSFETs for performing a write/read operation for the memory cell. The memory cell includes a flip-flop circuit constituted by a pair of pull-down n-type MOSFETs and a pair of pull-up resistor elements, and a pair of transmission gate n-type MOSFETs. Each of a pair of pull-down n-type MOSFETs and the pair of transmission gate n-type MOSFETs have a gate oxide film having a thickness and gate length which are smaller than those of a gate oxide film of each n-type MOSFET in the peripheral circuits.

REFERENCES:
patent: 4507759 (1985-03-01), Yasui et al.

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