CMOS SRAM cell

Details CMOS SRAM cell CMOS SRAM cell

1996-11-19

1998-04-28

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257370, 257903, 257904, 36518911, H01L 2976, H01L 2711

Patent

active

057448442

ABSTRACT:
An outline of an SRAM cell is rectangular. The SRAM cell have nMOS transistors QN1 and QN3 in a nMOS region 13A being on one side of the longitudinal direction, nMOS transistors QN2 and QN4 in a nMOS region 13B being on the opposite side thereof, pMOS transistors QP1 and QP2 in a central region 12, and isolation regions 14A and 14B being between the regions 13A and 12 and between the regions 13B and 12 respectively. The pMOS transistors QP1 and QP2 are on the nMOS transistor QN1 side and on the nMOS transistor QN2 side respectively within the region 12. The direction of bit lines is perpendicular to the longitudinal direction and the word line is parallel to the longitudinal direction. The nMOS transistors QN1, QN4 and the pMOS transistor QP1 are placed on one side of the regions 13A, 13B and 12 respectively in the direction perpendicular to the longitudinal direction, whereas the nMOS transistors QN3 and QN2 and the pMOS transistor QP2 are placed on the opposite side thereof.

REFERENCES:
patent: 5334863 (1994-08-01), Ohkawa et al.
patent: 5422840 (1995-06-01), Naiki

Affiliated with

Also associated with

Rating

CMOS SRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS SRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS SRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1534862