CMOS silicon-control-rectifier (SCR) structure for...

Details CMOS silicon-control-rectifier (SCR) structure for... CMOS silicon-control-rectifier (SCR) structure for...

2007-05-15

2007-05-15

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S112000, C257S121000, C257S173000, C257S356000, C257S361000, C257S362000

Reexamination Certificate

active

10954735

ABSTRACT:
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present invention, the protection device includes a semiconductor substrate having a first conductivity type. A well region formed with a second conductivity type in the semiconductor substrate. A first region formed in the well region. A second region formed having a portion in the weil region and another portion outside the well region, but still within the semiconductor substrate. Moreover, a third region formed within the well region and in between the first; region and the second region. A fourth region formed within the semiconductor substrate and outside the well region. A fifth region formed within the semiconductor substrate and in between the second region and the fourth region. Furthermore, the second region and the fifth region form the n+-p+junction of a zener diode and the breakdown voltage of the zener diode is controlled by adjusting the ion dosage in the second region.

REFERENCES:
patent: 5343053 (1994-08-01), Avery
patent: 5455436 (1995-10-01), Cheng
patent: 5602404 (1997-02-01), Chen et al.
patent: 5856214 (1999-01-01), Yu
patent: 6246079 (2001-06-01), Chen

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