Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2006-01-10
2009-02-17
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S233000
Reexamination Certificate
active
07492048
ABSTRACT:
Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. The semiconductor structure also comprises a transfer gate that comprises (i) a first extension region, (ii) a second extension region, and (iii) a floating diffusion region. The first and second extension regions are in direct physical contact with the photo diode and the floating diffusion region, respectively. The semiconductor structure further comprises a charge pushing region. The charge pushing region overlaps the first semiconductor region and does not overlap the floating diffusion region. The charge pushing region comprises a transparent and electrically conducting material.
REFERENCES:
patent: 5608243 (1997-03-01), Chi et al.
patent: 6063686 (2000-05-01), Masuda et al.
patent: 6252281 (2001-06-01), Yamamoto et al.
patent: 6501109 (2002-12-01), Chi
patent: 7253392 (2007-08-01), Hong et al.
patent: 2002/0043693 (2002-04-01), Tiwari et al.
patent: 2003/0006446 (2003-01-01), Forbes et al.
patent: 2005/0023530 (2005-02-01), Koyama
patent: 2005/0023615 (2005-02-01), Yano et al.
patent: 2005/0110078 (2005-05-01), Shino
patent: 2005/0121722 (2005-06-01), Oyamatsu
patent: 2007/0131991 (2007-06-01), Sugawa
Adkisson James William
Gambino Jeffrey Peter
Jaffe Mark David
Johnson Jeffrey Bowman
Lasky Jerome Brett
Canale Anthony J.
International Business Machines - Corporation
Potter Roy K
Schmeiser Olsen & Watts
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