CMOS semiconductor non-volatile memory device

Details CMOS semiconductor non-volatile memory device CMOS semiconductor non-volatile memory device

2011-03-01

2011-03-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21422, C257S324000

Reexamination Certificate

active

07898016

ABSTRACT:
A semiconductor device includes a substrate, a first insulating film, a first semiconductor layer disposed above the substrate with the first insulating film therebetween, a second semiconductor layer disposed above the first semiconductor layer with a second insulating film therebetween, a first conductivity type metal oxide semiconductor (MOS) disposed on at least one side surface of the first semiconductor layer, a second conductivity type MOS disposed on at least one side surface of the second semiconductor layer, a charge storage layer common to the first and second MOS transistors, and a control gate common to the first and second MOS transistors. The common charge storage layer is continuously provided from the side surface of the first semiconductor layer on which the first conductivity type MOS transistor is disposed to the side surface of the second semiconductor layer on which the second conductivity type MOS transistor is disposed.

REFERENCES:
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patent: 2006/0145240 (2006-07-01), Park et al.
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T. Sakai et al., Separation by Bonding Si Islands (SBSI) for LSI Applications, Second International SiGe Technology and Device Meeting, Meeting Abstract, May 2004, pp. 230-231.

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