CMOS semiconductor device with improved layout of transistors ne

Details CMOS semiconductor device with improved layout of transistors ne CMOS semiconductor device with improved layout of transistors ne

1996-11-14

1999-03-16

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257401, H01L 2362

Patent

active

058834150

ABSTRACT:
An improved layout of transistors near LCD drive terminals in a CMOS semiconductor device to reduce a chip size without damaging resistances against electrostatic destruction and latch-up. MOSFETs whose sources are connected to neither an electric source nor a ground are selectively arranged between two protective diffusion layers having different polarities, connected to a terminal.

REFERENCES:
patent: 5239197 (1993-08-01), Yamamoto

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