CMOS-process-compatible programmable via device

Details CMOS-process-compatible programmable via device CMOS-process-compatible programmable via device

2010-02-01

2010-10-12

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S482000, C438S102000

Reexamination Certificate

active

07811933

ABSTRACT:
Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided comprising a substrate; a dielectric layer on the substrate; a heater on at least a portion of a side of the dielectric layer opposite the substrate; a first oxide layer over the side of the dielectric layer opposite the substrate and surrounding at least a portion of the heater; a first capping layer over a side of the first oxide layer opposite the dielectric layer; at least one programmable via extending through the first capping layer and the first oxide layer and in contact with the heater, the programmable via comprising at least one phase change material; a second capping layer over the programmable via; a second oxide layer over a side of the first capping layer opposite the first oxide layer; a pair of first conductive vias, each extending through the first and second oxide layers and the first capping layer, and in contact with the heater; and a second conductive via, located between the pair of first conductive vias, extending through the second oxide layer and in contact with the second capping layer.

REFERENCES:
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 6839263 (2005-01-01), Fricke et al.
patent: 6967344 (2005-11-01), Ovshinsky et al.
patent: 7057923 (2006-06-01), Furkay et al.
patent: 7214957 (2007-05-01), Ryoo et al.
patent: 7214958 (2007-05-01), Happ
patent: 7579616 (2009-08-01), Chen et al.
patent: 7608851 (2009-10-01), Chen et al.
patent: 7659534 (2010-02-01), Chen et al.
patent: 7687309 (2010-03-01), Chen
patent: 2005/0058187 (2005-03-01), Groen et al.
patent: 2006/0097240 (2006-05-01), Lowrey et al.
patent: 2006/0097343 (2006-05-01), Parkinson
patent: 2007/0057341 (2007-03-01), Pellizzer
patent: 2007/0096071 (2007-05-01), Kordus et al.
patent: 2007/0099405 (2007-05-01), Oliva et al.
patent: 2008/0142775 (2008-06-01), Chen et al.
patent: 2008/0251778 (2008-10-01), Chen et al.
patent: 2008/0277644 (2008-11-01), Chen et al.
patent: 2009/0003045 (2009-01-01), Chen
patent: 2009/0014885 (2009-01-01), Chen et al.
patent: 2009/0033358 (2009-02-01), Chen et al.
patent: 2009/0033360 (2009-02-01), Chen et al.
patent: 2009/0101882 (2009-04-01), Chen et al.
patent: 2009/0111263 (2009-04-01), Chen et al.
patent: 2009/0291546 (2009-11-01), Chen et al.
patent: 2009/0305460 (2009-12-01), Chen et al.
patent: 2010/0038621 (2010-02-01), Chen et al.
K.N. Chen et al., Thermal Stress Evaluation of a PCRAM Material Ge2Sb2Te5, 21st IEEE Non-Volatile Semiconductor Memory Workshop, pp. 97-98 (2006).

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