CMOS power sensor

Details CMOS power sensor CMOS power sensor

2006-08-15

2006-08-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000

Reexamination Certificate

active

07091562

ABSTRACT:
A CMOS power sensor is disclosed in the present invention. The CMOS power sensor includes a current coil, a high voltage device circuit, and a Hall device. The current coil is fabricated during the process steps of forming gold bumps of a CMOS device. One end of the current coil is connected to a voltage source, and the other end of the current coil is connected to a load. The high voltage device circuit is connected to the voltage source. The Hall device is connected to the high voltage device circuit and induces a Hall voltage in response to the magnetic field generated by the current coil.

REFERENCES:
patent: 6639299 (2003-10-01), Aoki
patent: 6914331 (2005-07-01), Shimoishizaka et al.

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