Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1996-12-12
1999-07-06
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257378, 330252, H01L 29735, H03F 345
Patent
active
059201118
ABSTRACT:
An accumulated-base bipolar junction transistor and an application of said transistor is described. A base region of an accumulated-base bipolar junction is formed by the implantation and then the diffusion of a first dopant material into the semiconductor substrate. A base contact region is a rectangular ring of a second dopant type that is implanted and annealed into the base region. The base contact region is to form a low resistance path from the base region to external circuitry. A collector region is formed by the implantation and annealing of third dopant into the base region in the form of a rectangular ring within the base contact region and a first distance from the base contact region. An emitter region is a rectangular form implanted and annealed of the third dopant within the collector region and a second distance from the collector region. An insulating material such as silicon dioxide is deposited upon the surface of said accumulated-base transistor with openings in the insulating material in the base contact region, the collector region, and the emitter region to allow contact with external circuitry. A layer of polycrystalline silicon is deposited over the insulating material in the area between the collector region and the emitter region to form a base accumulator means. The base accumulator means is coupled to the emitter and to external circuitry. When a voltage supply is coupled to the emitter and the base accumulator means, a charge is accumulated at an interface of the base region and the insulating material between the collector region and the emitter region. The charge will improve the conductivity of the base region and the transconductance of the accumulated-base transistor.
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Liang Mong-Song
Wong Shyh-Chyi
Ackerman Stephen B.
Knowles Billy J.
Munson Gene M.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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