CMOS of semiconductor device and method for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S369000

Reexamination Certificate

active

06768179

ABSTRACT:

BACKGROUND
The inventions described herein relate to complementary metal oxide semiconductor (CMOS) devices and methods of manufacturing such devices. More particularly, the present inventions relate to CMOS devices having enhanced characteristics, high yield and high reliability, and to methods for manufacturing such devices.


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patent: 6362047 (2002-03-01), Ventajol
patent: 6444523 (2002-09-01), Fan et al.
patent: 6461959 (2002-10-01), Chien et al.
patent: 6531353 (2003-03-01), Lee
patent: 2002/0072156 (2002-06-01), Lee et al.
patent: 2003/0011017 (2003-01-01), Lee et al.
patent: 1995-7004816 (1995-11-01), None
patent: 2001-0062112 (2001-07-01), None

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