Cmos of semiconductor device and method for manufacturing...

Details Cmos of semiconductor device and method for manufacturing... Cmos of semiconductor device and method for manufacturing...

2002-09-25

2003-11-04

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S406000, C257S407000, C257S315000, C257S316000

Reexamination Certificate

active

06642132

ABSTRACT:

BACKGROUND
The inventions described herein relate to complementary metal oxide semiconductor (CMOS) devices and methods of manufacturing such devices. More particularly, the present inventions relate to CMOS devices having enhanced characteristics, high yield and high reliability, and to methods for manufacturing such devices.


REFERENCES:
patent: 6362047 (2002-03-01), Ventajol
patent: 6444523 (2002-09-01), Fan et al.
patent: 6531353 (2003-03-01), Lee
patent: 2002/0072156 (2002-06-01), Lee et al.
patent: 2003/0011017 (2003-01-01), Lee et al.

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