Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-01-09
1993-01-05
Epps, Georgia Y.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
36518905, 36518906, 36518909, 365190, 257372, 257369, H01L 27102, H01L 27105, G11C 700
Patent
active
051775867
ABSTRACT:
A CMOS memory device has a memory cell array, formed on a substrate of a first conductive type, for storing data. The data are input and output via bit line pairs connected to the memory cell array. Sense amplifiers of the first conductive type, which are embedded in wells of a second conductive type, amplify potential differences on the bit line pairs. The sense amplifiers are connected to and driven by a sense amplifier drive signal line. The sense amplifier drive signal line also biases the wells containing the sense amplifiers, thereby preventing latch-up.
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Ishimura Tamihiro
Miyamoto Sanpei
Miyawaki Masahumi
Uehara Hidenori
Epps Georgia Y.
Manzo Edward D.
OKI Electric Industry Co., Ltd.
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