CMOS logic gate having buried channel NMOS transistor for semico

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

438276, 438282, 257391, 257392, H01L 2976, H01L 2994

Patent

active

060810114

ABSTRACT:
A CMOS logic gate for a semiconductor apparatus having a buried channel NMOS transistor and a fabrication method of the same are disclosed. The CMOS logic gate according to the present invention includes a pull up unit gate-connected by an input voltage and pulling up an output voltage, a buried channel NMOS transistor connected with the pull up unit and gate-connected by a power voltage, and a surface channel NMOS transistor connected with the buried channel NMOS transistor and gate-connected by the input voltage for pulling down the output voltage for thereby enhancing a reliability of the CMOS logic gate.

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