Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-27
2000-06-27
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438276, 438282, 257391, 257392, H01L 2976, H01L 2994
Patent
active
060810114
ABSTRACT:
A CMOS logic gate for a semiconductor apparatus having a buried channel NMOS transistor and a fabrication method of the same are disclosed. The CMOS logic gate according to the present invention includes a pull up unit gate-connected by an input voltage and pulling up an output voltage, a buried channel NMOS transistor connected with the pull up unit and gate-connected by a power voltage, and a surface channel NMOS transistor connected with the buried channel NMOS transistor and gate-connected by the input voltage for pulling down the output voltage for thereby enhancing a reliability of the CMOS logic gate.
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Hyundai Electronics Industries Co,. Ltd.
Monin, Jr. Donald L.
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