CMOS level shifter

Details CMOS level shifter CMOS level shifter

1977-10-25

1979-04-17

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 307208, 307251, 307279, 307DIG1, H03K 1760, H03K 1704, H03K 3286, H03K 3353

Patent

active

041503082

ABSTRACT:
A level shifter using complementary metal oxide semiconductor (CMOS) transistors is provided. A first transistor couples a first voltage to a node of the level shifter circuit, and the first transistor is controlled by an input signal. A P-channel and an N-channel MOS device are connected in series between the first voltage and a second voltage. The gate electrodes of the P-channel and N-channel MOS devices are connected to the node. An output for the level shifter circuit is taken from a junction formed by the P-channel and N-channel MOS devices. A resistance is coupled between the gate electrodes of the P-channel and the N-channel MOS devices and the second voltage.

REFERENCES:
patent: 3676700 (1972-07-01), Buchanan
patent: 3765002 (1973-10-01), Basse
patent: 3823330 (1974-07-01), Rapp
patent: 3900746 (1975-08-01), Kraft et al.
patent: 3906254 (1975-09-01), Lane
patent: 3965460 (1976-06-01), Barbara
patent: 4000411 (1976-12-01), Sano et al.
patent: 4023050 (1977-05-01), Fox et al.
patent: 4029973 (1977-06-01), Kobayashi et al.
patent: 4045691 (1977-08-01), Asano
patent: 4080539 (1978-03-01), Stewart
Lohman, "Application of MOSFET's in Microelectronics", SCP and Solid-State Technology (pub.) pp. 23-29, 3/1966.

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