CMOS inverters configured using multiple-gate transistors

Details CMOS inverters configured using multiple-gate transistors CMOS inverters configured using multiple-gate transistors

2007-05-08

2007-05-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

10313887

ABSTRACT:
An inverter that includes a first multiple-gate transistor including a source connected to a power supply, a drain connected to an output terminal, and a gate electrode; a second multiple-gate transistor including a source connected to a ground, a drain connected to the output terminal, and a gate electrode; and an input terminal connected to the gate electrodes of the first and second multiple-gate transistors. Each of the first and second multiple-gate transistors may further include a semiconductor fin formed vertically on an insulating layer on top of a substrate, a gate dielectric layer overlying the semiconductor fin, and a gate electrode wrapping around the semiconductor fin separating the source and drain regions.

REFERENCES:
patent: 5464783 (1995-11-01), Kim et al.
patent: 6475890 (2002-11-01), Yu
patent: 6534807 (2003-03-01), Mandelman et al.
patent: 6617210 (2003-09-01), Chau et al.
patent: 6858478 (2005-02-01), Chau et al.
Tang et al. (“FinFET—A quasi-Planar Double Gate MOSFET”, 2001 IEEE International Solid State Circuits Conference, (pp. 118-119 and 437).
Yang et al. (VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on, Jun. 11-13, 2002, pp. 104-105).
S.Wolf et al. (Silicon Processing for the VLSI Era; vol. 2-Chapter 6, CMOS Process Integration, p. 369).

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