CMOS interface circuit formed in silicon-on-insulator substrate

Details CMOS interface circuit formed in silicon-on-insulator substrate CMOS interface circuit formed in silicon-on-insulator substrate

1995-04-28

1998-06-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 437 40, H01L 2701

Patent

active

057738645

ABSTRACT:
A CMOS circuit formed in a silicon-on-insulator (SOI) substrate includes MOSFETs having drain and body diffusions which extend through the silicon layer to the surface of the insulating layer. Each of drains of the N-channel and P-channel MOSFETs serves also as a terminal (anode or cathode) of a diode that is connected in series with the MOSFET. This structure allows the CMOS device to be fabricated as a completely symmetrical structure without adding processing steps beyond those customary in fabricating conventional CMOS devices.

REFERENCES:
patent: 4253162 (1981-02-01), Hollingsworth
patent: 4725875 (1988-02-01), Hsueh
patent: 4918498 (1990-04-01), Plus et al.
patent: 5412240 (1995-05-01), Inoue et al.

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