CMOS integrated circuit having a sacrificial metal spacer for pr

Details CMOS integrated circuit having a sacrificial metal spacer for pr CMOS integrated circuit having a sacrificial metal spacer for pr

1996-12-06

1999-02-09

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257347, 257344, 257336, 257900, H01L 2900

Patent

active

058698795

ABSTRACT:
An integrated circuit is formed whereby junction of NMOS transistors are formed dissimilar to junctions of PMOS transistors. The NMOS transistors include an LDD area, an MDD area and a heavy concentration source/drain area. Conversely, the PMOS transistor include an LDD area and a source/drain area. The NMOS transistor junction is formed dissimilar from the PMOS transistor junction to take into account the less mobile nature of the junction dopants relative to the PMOS dopants. Thus, a lessening of the LDD area and the inclusion of an MDD area provide lower source/drain resistance and higher ohmic connectivity in the NMOS device. The PMOS junction includes a relatively large LDD area so as to draw the highly mobile, heavy concentration boron atoms away from the PMOS channel.

REFERENCES:
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4949136 (1990-08-01), Jain
patent: 5015598 (1991-05-01), Verhaar
patent: 5091763 (1992-02-01), Sanchez
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5422506 (1995-06-01), Zamapian
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5498555 (1996-03-01), Lin
Wolf et al., Silicon Processing for the VLSI Era--vol. 1: Process Technology, Lattice Press, CA, 1986, p. 183.

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