Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1997-04-02
2000-04-18
Picardat, Kevin M.
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
438 6, 438 10, H01L 2166, H01L 2100
Patent
active
060514426
ABSTRACT:
The disclosed device and method can inspect the CMOS integrated circuit devices at high precision on the basis of the static current of the voltage supply connected thereto. A CMOS integrated circuit comprises: at least one CMOS circuit having at least one P-channel MOS transistor and at least one N-channel MOS transistor; a first pad connected to a source of the P-channel MOS transistor; a second pad connected to a source of the N-channel MOS transistor; a third pad connected to an N-type substrate or an N-type well formed with the P-channel MOS transistor; and a fourth pad connected to a P-type substrate or a P-type well formed with the N-channel MOS transistor.
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Kabushiki Kaisha Toshiba
Picardat Kevin M.
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