Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-07
2005-06-07
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S440000
Reexamination Certificate
active
06903394
ABSTRACT:
CMOS image sensors have charge storage capacitors connected to various light sensitive and/or electrical elements. The capacity of the capacitors used for each pixel is tailored to the color to be detected. Charge storage capacitors may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.
REFERENCES:
patent: 4316946 (1982-02-01), Masters et al.
patent: 4419421 (1983-12-01), Wichelhaus et al.
patent: 4671618 (1987-06-01), Wu et al.
patent: 4800526 (1989-01-01), Lewis
patent: 4942459 (1990-07-01), Hieda et al.
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5314772 (1994-05-01), Kozicki
patent: 5798745 (1998-08-01), Steffensmeier
patent: 6005619 (1999-12-01), Fossum
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6097022 (2000-08-01), Merrill et al.
patent: 6137100 (2000-10-01), Fossum et al.
patent: 6204524 (2001-03-01), Rhodes
patent: 6211510 (2001-04-01), Merrill et al.
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6369853 (2002-04-01), Merrill et al.
patent: 6407440 (2002-06-01), Rhodes
patent: 6410899 (2002-06-01), Merrill et al.
patent: 6452633 (2002-09-01), Merrill et al.
patent: 6469364 (2002-10-01), Kozicki
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6489992 (2002-12-01), Savoye
patent: 6512544 (2003-01-01), Merrill et al.
patent: 6512858 (2003-01-01), Lyon et al.
patent: 6611037 (2003-08-01), Rhodes
patent: 6636261 (2003-10-01), Pritchard et al.
patent: 2002/0123170 (2002-09-01), Moore et al.
patent: 2002/0127886 (2002-09-01), Moore et al.
patent: 2002/0163828 (2002-11-01), Krieger et al.
patent: 2002/0168820 (2002-11-01), Kozicki
patent: 2002/0190350 (2002-12-01), Kozicki
patent: 2003/0001229 (2003-01-01), Moore et al.
patent: 2003/0027416 (2003-02-01), Moore
patent: 2003/0035314 (2003-02-01), Kozicki
patent: 2003/0035315 (2003-02-01), Kozicki
patent: 2003/0136989 (2003-07-01), Amiotti et al.
patent: WO-98/19455 (1998-05-01), None
patent: WO-99/65248 (1999-12-01), None
Helbert et al.,Intralevel hybrid resist process with submicron capability,SPIE vol. 333 Submicron Lithography, pp. 24-29 (1982), no month given.
Kozicki, et al., “Applications of Programmable Resistance Changes in Metal-doped Chalcogenides”, Proceedings of the 1999 Symposium on Solid State Ionic Devices, Editors—E.D. Wachsman et al., The Electrochemical Society, Inc., 1-12 (1999), no month given.
Kozicki, et al.,Nanoscale effects in devices based on chalcogenide solid solutions,Superlattices and Microstructures, 27, 485-488 (2000), no month given.
Kozicki, et al.,Nanoscale phase separation in Ag-Ge-Se glasses,Microelectronic Engineering, vol. 63/1-3, 155-159 (2002), no month given.
M.N. Kozicki and M. Mitkova,Silver Incorporation in thin films of selenium rich Ge-Se glasses,Proceedings of the XIX International Congress on Glass, Society for Glass Technology, 226-227 (Jul. 2001).
LandOfFree
CMOS imager with improved color response does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CMOS imager with improved color response, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS imager with improved color response will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3508699