CMOS image sensors and methods of manufacturing the same

Details CMOS image sensors and methods of manufacturing the same CMOS image sensors and methods of manufacturing the same

2011-01-25

2011-01-25

Smith, Zandra (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S069000, C438S073000, C438S199000, C438S200000, C257S222000, C257S232000, C257S290000, C257S291000, C257S292000, C257SE21131

Reexamination Certificate

active

07875491

ABSTRACT:
A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical charges accumulated in the photodiode; a floating diffusion area formed on a second portion of the semiconductor substrate, on an opposite side of the transfer gate from the photodiode, to accommodate the optical charges; and/or a channel area formed under the transfer gate and contacting a side of the photodiode to transfer the optical charges. The transfer gate may be formed, at least in part, of transparent material. A method of manufacturing a complimentary metal-oxide-semiconductor image sensor may include: forming the photodiode; forming the floating diffusion area, separate from the photodiode; and/or forming the transfer gate, near the photodiode, to transfer optical charges accumulated in the photodiode.

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