CMOS image sensors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S432000, C257SE31127

Reexamination Certificate

active

07612395

ABSTRACT:
CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

REFERENCES:
patent: 6221687 (2001-04-01), Abramovich
patent: 6274917 (2001-08-01), Fan et al.
patent: 6362513 (2002-03-01), Wester
patent: 2002/0017655 (2002-02-01), Fujisawa et al.
patent: 2003204050 (2003-07-01), None

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