Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S288000, C257S212000, C257S691000, C257S723000, C438S107000
Reexamination Certificate
active
07977716
ABSTRACT:
A photosensor and an imaging array utilizing the same are disclosed. The photosensor includes a light conversion region that has separate charge storage regions. The light conversion region includes a plurality of separate charge storage regions within a doped region, each charge collection region being doped such that the mobile charges generated by light striking that charge storage region are prevented from moving to an adjacent charge storage region. The photosensor also includes a plurality of transfer gates, having a gate region adjacent to a corresponding one of the charge storage regions and disposed between that charge storage region and a drain region. The charge collection regions and the drain regions are doped such that the mobile charges collected in the charge storage region will flow to the drain region when a first electric field is applied to the gate region.
REFERENCES:
patent: 2004/0173864 (2004-09-01), Inagaki
patent: 2006/0208163 (2006-09-01), Manabe et al.
patent: 2007/0045679 (2007-03-01), McKee
patent: 2007/0210239 (2007-09-01), Lee et al.
International Search Report, PCT/US2009/035943, Oct. 27, 2009, all pages.
Chiu Tsz K
Fairchild Imaging, Inc.
Smith Zandra
Ward Calvin B.
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