Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-22
2008-07-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S233000, C257S290000, C257S291000, C257S293000, C257S461000
Reexamination Certificate
active
07397076
ABSTRACT:
Disclosed are a CMOS image sensor and a fabrication method thereof, which is adequate to reduce dark current. The CMOS image sensor comprises a device isolation region and an active region, which are formed on a semiconductor substrate; a photocharge generating portion formed on the active region for absorbing light externally and generating and accumulating charges; a transistor portion including at least one transistor for processing the charges accumulated in the photocharge generating portion; and a control terminal for preventing dark current from being introduced into the photocharge generating portion, and ejecting the dark current after temporally storing the dark current. The control terminal is operated to store the dark current for an integration time when a photodiode as the photocharge generating portion receives light, and eject the stored dark current by being grounded when the reset transistor is turned on.
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Korean Prior Art Search, dated, Jul. 15, 2005. Grant of Patent by KIPO on Jul. 19, 2005.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Ho Hoang-Quan
Huynh Andy
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