CMOS image sensor with a microlens and method for...

Details CMOS image sensor with a microlens and method for... CMOS image sensor with a microlens and method for...

2006-08-14

2010-02-09

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000

Reexamination Certificate

active

07659565

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are provided. A CMOS image sensor includes: a plurality of photodiodes a predetermined distance apart on a semiconductor substrate; an insulation layer on an entire surface of the semiconductor substrate; a passivation layer on the insulation layer; a plurality of color filters on the passivation layer corresponding to the photodiodes; a planarization layer on an entire surface of the semiconductor substrate including the color filters; and a microlens on the planarization layer corresponding to each of the color filters and having a bottom diameter of 2.5 to 3.0 μm.

REFERENCES:
patent: 6417022 (2002-07-01), Hsiao et al.
patent: 2006/0033131 (2006-02-01), Kim
patent: 2006/0057928 (2006-03-01), Nagasaka et al.
patent: 2006/0124948 (2006-06-01), Lee

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