CMOS image sensor structure

Details CMOS image sensor structure CMOS image sensor structure

2008-03-04

2010-06-01

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257SE27130

Reexamination Certificate

active

07728365

ABSTRACT:
A CMOS image sensor (CIS) process is described. A semiconductor substrate is provided, and then a gate dielectric layer, a gate material layer and a thickening layer are sequentially formed on the substrate, wherein the thickening layer includes at least a hard mask layer. The thickening layer is defined to form a transfer-gate pattern, and then the transfer-gate pattern is used as an etching mask to pattern the gate material layer and form a transfer gate. Ion implantation is then conducted to form a PN diode in the substrate with the transfer-gate pattern and the transfer gate as a mask.

REFERENCES:
patent: 7338832 (2008-03-01), Park et al.
patent: 7344910 (2008-03-01), Rhodes
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2005/0179071 (2005-08-01), Mouli
patent: 2006/0255381 (2006-11-01), McKee
patent: 2007/0012962 (2007-01-01), Rhodes

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