CMOS image sensor providing uniform pixel exposure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S230000

Reexamination Certificate

active

11274855

ABSTRACT:
An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.

REFERENCES:
patent: 6486503 (2002-11-01), Fossum
patent: 6686220 (2004-02-01), Rhodes et al.
patent: 7109537 (2006-09-01), Dosluoglu et al.
patent: 2004/0051801 (2004-03-01), Iizuka et al.
patent: 2006/0065915 (2006-03-01), Kuwazawa
patent: 2006/0267053 (2006-11-01), Yang et al.
patent: 2002-064751 (2002-02-01), None
patent: 2004-111590 (2004-04-01), None

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