Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2007-02-27
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257SE27108
Reexamination Certificate
active
11373811
ABSTRACT:
The method for manufacturing a test pattern for use in a CMOS image sensor is employed to measure a sheet resistivity of each ion implantation region, respectively. The method includes steps of: forming an FOX area on a semiconductor substrate so as to define an active area; forming a first blocking pad on the semiconductor substrate being overlapped partially the active area and the FOX area, wherein the first blocking pad has a pair of blocking pads separated by a predetermined distance from each other; carrying out a first ion implantation process by using the first blocking pad as a mask, thereby forming a first ion implantation region; forming a second blocking pad between the pair of blocking pads; carrying out a second ion implantation process by using the first and the second blocking pads as the mask, thereby forming a second ion implantation region; and forming a first and a second test pad which are electrically connected to contacts for measuring a sheet resistivity of the first and second ion implantation regions, respectively.
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Blakely & Sokoloff, Taylor & Zafman
Magnachip Semiconductor Ltd.
Nguyen Khiem
Smith Matthew
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