Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-12-30
2008-08-12
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000
Reexamination Certificate
active
07411234
ABSTRACT:
A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.
REFERENCES:
patent: 6380568 (2002-04-01), Lee et al.
patent: 6462365 (2002-10-01), He et al.
patent: 6486521 (2002-11-01), Zhao et al.
patent: 6838714 (2005-01-01), Rhodes et al.
patent: 6855595 (2005-02-01), Han et al.
patent: 2003/0127666 (2003-07-01), Lee
patent: 2005/0064620 (2005-03-01), Han
patent: 10-098176 (1998-04-01), None
patent: 2003-42303 (2003-05-01), None
patent: 2003-42308 (2003-05-01), None
Dongbu Electronics Co. Ltd.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Lewis Monica
LandOfFree
CMOS image sensor having impurity diffusion region separated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CMOS image sensor having impurity diffusion region separated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor having impurity diffusion region separated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3993554