CMOS image sensor having drive transistor with increased...

Details CMOS image sensor having drive transistor with increased... CMOS image sensor having drive transistor with increased...

2006-08-09

2010-11-02

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000, C257S443000, C257SE27133, C257SE21429, C438S073000, C438S589000, C438S964000

Reexamination Certificate

active

07825438

ABSTRACT:
A CMOS image sensor cell includes a semiconductor active region of first conductivity type having a surface thereon and a P-N junction photodiode in the active region. A drive transistor is also provided in the semiconductor active region. The drive transistor has a gate electrode that is configured to receive charge generated in the P-N junction photodiode during an image capture operation (i.e., during capture of photons received from an image). This drive transistor has a gate electrode and a contoured channel region extending underneath the gate electrode. The contoured channel region has an effective channel length greater than a length of the gate electrode.

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First Office Action, Chinese Patent Application No. 200610151336.3, Apr. 10, 2009.

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