CMOS image sensor for improving the amount of light incident...

Details CMOS image sensor for improving the amount of light incident... CMOS image sensor for improving the amount of light incident...

2006-09-08

2010-06-22

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE31121, C438S070000

Reexamination Certificate

active

07741667

ABSTRACT:
Provided are a CMOS image sensor and a fabricating method thereof. The CMOS image sensor includes a device isolation layer, a plurality of photodiode regions, an interlayer insulating layer, a refracting layer, a planarizing layer, a color filter layer, and a plurality of microlenses. The refracting layer, with a higher refractive index than that of the interlayer insulating layer, is formed through the interlayer insulating layer on portions of the device isolation layer, to divide the interlayer insulating layer and give the divided portions thereof the characteristics of a waveguide.

REFERENCES:
patent: 6979588 (2005-12-01), Jeong et al.
patent: 7193289 (2007-03-01), Adkisson et al.
patent: 7339155 (2008-03-01), Lee
patent: 7342268 (2008-03-01), Adkisson et al.
patent: 2005/0253212 (2005-11-01), Nam et al.
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2006/0138480 (2006-06-01), Adkisson et al.
patent: 20041097031 (2005-06-01), None
patent: 2004-000943 (2005-07-01), None
patent: 10-2000-0086312 (2002-07-01), None
patent: 10-2003-0068503 (2005-04-01), None

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