Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-04-21
2000-12-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257294, 257369, 257382, 257435, H01L 31113, H01L 2976, H01L 2994, H01L 31062
Patent
active
061602825
ABSTRACT:
An active CMOS pixel or pixel array and method for manufacturing uses silicides to improve sheet conductivity of polysilicon and diffusions and for improved conductivity of silicon to metal connections without downgrading the photon sensing performance of the pixels. Masks are used in manufacturing of the pixels by selectively masking photon sensors from the optical opaqueness of silicides and photon sensor related circuit elements from silicide induced photon sensor dark current leakage while allowing formation of silicides for providing highly conductive contacts between. Silicides are used for improving the sheet conductivity of polysilicon and diffusions in the readout transistors and for improved conductivity of silicon to metal line connection pads.
REFERENCES:
patent: 3934161 (1976-01-01), Caywood
patent: 3988619 (1976-10-01), Malaviya et al.
patent: 4363963 (1982-12-01), Ando
patent: 4499529 (1985-02-01), Figueroa
patent: 4573077 (1986-02-01), Imai
patent: 4626915 (1986-12-01), Takatsu
patent: 4654714 (1987-03-01), Hurst, Jr. et al.
patent: 4742238 (1988-05-01), Sato
patent: 4809075 (1989-02-01), Akimoto et al.
patent: 4839735 (1989-06-01), Kyomasu et al.
patent: 4843474 (1989-06-01), Suzuki
patent: 4901129 (1990-02-01), Hynecek
patent: 4942473 (1990-07-01), Zeevi et al.
patent: 5014107 (1991-05-01), Vora
patent: 5021853 (1991-06-01), Mistry
patent: 5028972 (1991-07-01), Watanabe et al.
patent: 5055418 (1991-10-01), Vora
patent: 5117292 (1992-05-01), Matsunaga
patent: 5276521 (1994-01-01), Mori
patent: 5317174 (1994-05-01), Hynecek
patent: 5335015 (1994-08-01), Cooper et al.
patent: 5341008 (1994-08-01), Hynecek
patent: 5424223 (1995-06-01), Hynecek
patent: 5428390 (1995-06-01), Cooper et al.
patent: 5434620 (1995-07-01), Higuchi et al.
patent: 5463232 (1995-10-01), Yamashira et al.
patent: 5471245 (1995-11-01), Cooper et al.
patent: 5541402 (1996-07-01), Ackland et al.
patent: 5547881 (1996-08-01), Wang et al.
patent: 5576763 (1996-11-01), Ackland et al.
patent: 5589423 (1996-12-01), White et al.
patent: 5614744 (1997-03-01), Merill
patent: 5622885 (1997-04-01), Merrill et al.
patent: 5625210 (1997-04-01), Lee et al.
patent: 5631704 (1997-05-01), Dickinson et al.
patent: 5705441 (1998-01-01), Wang et al.
patent: 5712682 (1998-01-01), Hannah
patent: 5739562 (1998-04-01), Ackland et al.
patent: 5986297 (1999-11-01), Guidash et al.
patent: 6040592 (2000-03-01), McDaniel et al.
David X.D. Yang et al. "Test Structures for Characterization and Comparative Analysis of CMOS Image Sensors" SPIE vol. 2950.
Chye Huat Aw, et al. "A 128x128-Pixel Standard-CMOS Image Sensor with Electronic Shutter" IEEE International Solid-State Circuits Conference vol. 39, pp. 180-181,440 Feb. 1996.
R.M. Guidash, et al. "A 0.6 um CMOS Pinned Photodiode Color Imager Technology" IEDM pp. 927-929 1997.
S. Decker et, al. "A 256x256 CMOS Imaging Array with Wide Dynamic Range Pixels and Column-Parallel Digital Output " IEEE International Solid-State Circuits Conference pp. 176-177 1998.
Abbas El Garmal, et al. "Modeling and Estimation of FPN Components in CMOS Image Sensors" Information Systems Laboratory, Stanford University pp. 1-10 1987.
Alex Dickinson, et al. "TP 13.5 A 256x256 CMOS Active Pixel Image Sensor with Motion Detection" IEEE International Solid-State Circuits Conference pp. 226-227 1995.
Andrew J. Blanksby, et al. "Noise Performance of a color CMOS Photogate Image Sensor" IEEE pp. 205-208 1997.
Author Unknown, "Title Unknown" IEDM PP. 202-204 1997.
Bernwald Rossler "Electrically Erasable and Reprogrammable Read-Only Memory Using the n-Channel SIMOS One-Transistor Cell" IEEE Transactions on Electron Devices vol. ED-24, No. 5 pp. 606-610 May 1977.
Carver A. Mead, et al. "Scanners for Visualizing Activity of Analog VLSI Circuitry" California Institute of Technology Computation and Neural Systems Program pp. 1-29 Jul. 5, 1991.
Eric R. Fossum "Active Pixel Sensors: Are CCD's Dinosaurs?" SPIE vol. 1900 pp. 2-14.
Hon-Sum Philip Wong, et al. CMOS Active Pixel Image Sensors Fabricated Using a 1.8-V, 0.25-um CMOS Technology pp. 889-894 IEEE Transactions on Electron Devices vol. 45 No. 4 Apr. 1998.
Hon-Sum Philip Wong "CMOS Image Sensors--Recent Advances and Device Scaling Considerations" IEEE pp. 201-204 1997.
Orly Yadid-Pecht, et al. "A Random Access Photodiode Array for Intelligent Image Capture" IEEE Transactions on Electron Devices, vol. 38 No. 8 pp 1772-1780 Aug. 1991.
R. Daniel McGrath, et al. "FA 11.2: Current-Mediated, Current-Reset 768x512 Active Pixel Sensor Array" IEEE/Slide Supplement pp. 182-183 & 138-139.
R. Panicacci, et al. "1/4-Inch CMOS Active Pixel Sensor with Smart On-Chip Functions and full Digital Interface" Hot Chips IX pp. 41-53 Aug. 25-26 1997.
S.M. SZE "Physics of Semiconductor Devices" Wiley-Interscience pp. 526-533 1969.
Stephen John Decker "A Wide Dynamic Range CMOS Imager With Parallel On-Chip Analog-to-Digital Conversion" pp 1-205 1997.
Sunetra K. Mendis et, al "A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems" IEEE pp. 583-586 1993.
T. Delbruck et, al "Analog VLSI Phototransduction by continuous-time, adaptive, logarithmic photoreceptor circuits" California Institute of Technology Computation and Neural Systems Program CNS Memo No. 30 Apr. 2, 1996.
Tobi Delbruck, et al. "Analog VLSI Adaptive, Logarithmic, Wide-Dynamic-Range Photoreceptor" ISCAS '94 Proceedings of the Int'l Symposium on Circuits and Systems IEEE London, May 1994.
Tetuo Nomoto, et al. "FA 11.4: A 4M-Pixel Image Sensor with Block and step Access Capability" IEEE International pp. 186-187 Plus Four Additional Slides 1997.
Yoshiaki Hagiwara, Member, IEEE "High-Density and High-Quality Frame Transfer CCD Iamger with Very Low Smear, Low Dark Current, and Very High Blue Sensitivity" IEEE Transactions on Electron Devices, vol. 43 No. 12 pp . 2122-2130 Dec. 1996.
Foveon, Inc.
Ngo Ngan V.
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