CMOS image sensor and method of manufacturing thereof

Details CMOS image sensor and method of manufacturing thereof CMOS image sensor and method of manufacturing thereof

2007-11-30

2009-10-06

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27133, C438S073000

Reexamination Certificate

active

07598553

ABSTRACT:
A CMOS image sensor comprising an epitaxial layer formed on a semiconductor layer, a device isolating layer formed on the epitaxial layer in order to divide the isolating layer into an active region and a device isolating region, the active region including a photo diode region and a transistor region, a drive transistor including a gate electrode formed on the epitaxial layer and a gate spacer formed on both side walls of the gate electrode, a floating diffusion region formed on the epitaxial layer, a trench hole formed in the device isolating layer and epitaxial layer in an area between the photo diode region and the floating diffusion region, a poly wiring formed in the trench hole which extends from the gate electrode of the drive transistor to the photo diode region or the floating diffusion region, and an impurity diffusion region formed by ion implanting the epitaxial layer on the side of the gate spacer.

REFERENCES:
patent: 2007/0152247 (2007-07-01), Lee
patent: 2008/0128768 (2008-06-01), Kao

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