CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2006-09-29

2009-06-30

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S432000, C257SE27133

Reexamination Certificate

active

07554143

ABSTRACT:
A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same arc disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating the conductive circuits, and a micro-lens formed of the interlayer dielectrics and focusing the irradiated light to the photodiode, the CMOS image sensor includes a lens formed in a dome shape on any one of the interlayer dielectrics and re-focusing the light focused by the micro-lens to the photodiode.

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