CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-12-22

2008-11-18

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S294000, C257S440000, C257SE27133

Reexamination Certificate

active

07453110

ABSTRACT:
Provided is a CMOS image sensor. The CMOS image sensor can include a semiconductor substrate, a blue photodiode region, a red photodiode region, a green photodiode region, an overcoat layer, and microlenses. The substrate can have a first photodiode region, a second photodiode region, and a transistor region. The blue photodiode region is formed having a predetermined depth in the first photodiode region. The red photodiode region is formed in the first photodiode region having a depth greater than that of the blue photodiode region with a gap separating the red photodiode region from the blue photodiode region. The green photodiode region is formed in the second photodiode region having a depth between the depths of the blue and red photodiode regions. The overcoat layer is formed on the semiconductor substrate, and microlenses are formed on the overcoat layer to correspond to the first and second photodiode regions.

REFERENCES:
patent: 5965875 (1999-10-01), Merrill
patent: 7345703 (2008-03-01), Lee

Affiliated with

Also associated with

Rating

CMOS image sensor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027862