CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2005-12-29

2008-10-28

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257SE27134, C257SE31121, C257SE31122, C438S069000, C438S070000, C438S200000

Reexamination Certificate

active

07442994

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiodes region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

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patent: WO 2004/054001 (2004-06-01), None
patent: WO 2004054001 (2004-06-01), None

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