CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2008-09-23

2010-06-15

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257S294000, C257S447000, C257SE27133, C257SE27144, C257SE31121, C257SE31122

Reexamination Certificate

active

07737477

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a transistor region and a field area for isolation of the active area, a p-type semiconductor layer on the transparent substrate, a photodiode in the p-type semiconductor layer corresponding to the photodiode region, and a plurality of transistors in the p-type semiconductor layer corresponding to the transistor region.

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