CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2007-12-13

2010-12-21

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S292000, C257S293000, C257SE31073, C257S446000, C257S504000, C257S544000, C257S545000, C257SE29019, C257SE21544, C438S196000, C438S218000, C438S220000, C438S356000, C438S414000

Reexamination Certificate

active

07855407

ABSTRACT:
Embodiments relate to a Complementary Metal Oxide Semiconductor (CMOS) image sensor, and to a method for manufacturing the same, that improves the low-light level characteristics of the CMOS image sensor. The CMOS image sensor has a photosensor unit and a signal processing unit, and may include a semiconductor substrate having a device isolating implant area provided with a first ion implant area and a complementary second ion implant area within the first ion implant area; a device isolating layer in the signal processing unit; a photodiode in the photosensor unit; and transistors in the signal processing unit. A crystal defect zone neighboring the photodiode may be minimized using the device isolating implant area between adjacent photodiodes so that a source of dark current can be reduced and the occurrence of interface traps can be prevented, making it possible to improve the low-light level characteristics of the image sensor.

REFERENCES:
patent: 2005/0116259 (2005-06-01), Komori
patent: 2005/0176167 (2005-08-01), Lee
patent: 2005/0176176 (2005-08-01), Shimokawa et al.
patent: 2006/0148194 (2006-07-01), Lim
German Office Action dated Sep. 21, 2010; German Patent Application No. 10 2007 060 836.7; German Patent and Trademark Office, Munich, Germany.

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