CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2005-02-01

2005-02-01

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S396000, C438S073000, C438S078000, C438S424000

Reexamination Certificate

active

06849886

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises the steps of depositing a sacrificial oxide layer and a hard mask layer on a semiconductor substrate; etching the sacrificial oxide layer and the hard mask layer to form a mask pattern; etching the substrate to a predetermined depth to form a trench; depositing an isolating material in the trench and planarizing it until substantially coplanar with the hard mask layer; removing the hard mask layer to leave a protrusion in the isolating layer; depositing an insulating layer on the substrate and isolating layer; and etching the insulating layer and the sacrificial oxide layer sufficiently to form a spacer mask and expose the surface of the substrate.

REFERENCES:
patent: 4722910 (1988-02-01), Yasaitis
patent: 5859450 (1999-01-01), Clark et al.
patent: 6462365 (2002-10-01), He et al.

Affiliated with

Also associated with

Rating

CMOS image sensor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3497071