CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2005-12-23

2009-02-17

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S069000, C257S432000, C438S065000, C438S066000, C438S113000, C438S460000, C438S464000

Reexamination Certificate

active

07491993

ABSTRACT:
Disclosed are a CMOS image sensor capable of improving the focusing capability of light and a method for manufacturing the same. The CMOS image sensor includes a plurality of first micro-lenses formed in the upper part of the planarization layer, each of the first micro-lenses arranged over a corresponding photodiode, and a plurality of second micro-lenses formed on the planarization layer, each of the plurality of second micro-lenses wrapping a corresponding first micro-lens respectively.

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