CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-10-11

2009-06-23

Ho, Hoai V (Department: 2827)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S296000, C257S362000, C257S290000, C257S395000

Reexamination Certificate

active

07550798

ABSTRACT:
Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive diffusion region formed in a photodiode area of the semiconductor substrate, a floating diffusion region formed in a transistor region of the semiconductor substrate, and an oxide region formed in the semiconductor substrate below the floating diffusion region.

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