Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29264
Reexamination Certificate
active
07863658
ABSTRACT:
There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.
REFERENCES:
patent: 6548859 (2003-04-01), Maegawa
patent: 6914295 (2005-07-01), Chau et al.
patent: 2002/0003256 (2002-01-01), Maegawa
patent: 2002/0014666 (2002-02-01), Ohmi et al.
patent: 2003/0008450 (2003-01-01), Tsai et al.
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2004/0209463 (2004-10-01), Kim et al.
patent: 2004/0219802 (2004-11-01), Park et al.
patent: 2005/0040444 (2005-02-01), Cohen
patent: 2005/0104096 (2005-05-01), Lee et al.
patent: 1012310 (1991-04-01), None
patent: 1171315 (2004-10-01), None
patent: 497272 (2002-08-01), None
Ho Won-Joon
Lee Kyung-Lak
Belousov Alexander
McAndrews Held & Malloy Ltd.
Smith Bradley K
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