CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-06-19

2007-06-19

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

C257S215000

Reexamination Certificate

active

10975200

ABSTRACT:
A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor; a device isolation layer formed in the device isolation area of the semiconductor substrate; a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer; a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer.

REFERENCES:
patent: 5841126 (1998-11-01), Fossum et al.
patent: 5886659 (1999-03-01), Pain et al.
patent: 5990506 (1999-11-01), Fossum et al.
patent: 6005619 (1999-12-01), Fossum
patent: 6021172 (2000-02-01), Fossum et al.
patent: 6979587 (2005-12-01), Lee
patent: 7005689 (2006-02-01), Song et al.

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