CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2005-12-29

2008-10-28

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S233000, C257SE27132, C257SE27133, C438S048000, C438S065000

Reexamination Certificate

active

07442975

ABSTRACT:
A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlayer insulating layer to electrically connect the respective photodiodes with each other, an oxide layer, a passivation layer to protect the CMOS image sensor from external sources, and microlenses formed to pass through the passivation layer at portions corresponding to the photodiodes.

REFERENCES:
patent: 6379992 (2002-04-01), Jo
patent: 2006/0054939 (2006-03-01), Hsu et al.
patent: 2006/0141660 (2006-06-01), Lee
patent: 1020040059760 (2004-07-01), None

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