Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-29
2008-09-09
Sefer, Ahmed (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S432000, C257SE31120, C257SE21252, C257SE27132, C438S070000
Reexamination Certificate
active
07423307
ABSTRACT:
Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging, and a method of fabricating the same. The CMOS image sensor may include: a semiconductor substrate; at least one photodiode on or in the semiconductor substrate; a first insulating layer on the substrate including the photodiode(s); a plurality of metal lines on and/or in the first insulating layer; a second insulating layer on the first insulating layer including at least some of the metal lines; a patterned light shielding layer on the second insulating layer; and microlenses in a remaining space on the second insulating layer.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Sefer Ahmed
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