CMOS image sensor and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S291000, C257S293000, C257S332000

Reexamination Certificate

active

11318577

ABSTRACT:
A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the transfer transistor, formed in the trench, a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area, and a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area.

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patent: 10-2003-0000654 (2003-01-01), None
patent: 2003-0000654 (2003-01-01), None

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