Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-29
2008-07-29
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257S293000, C257S332000
Reexamination Certificate
active
07405437
ABSTRACT:
A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the transfer transistor, formed in the trench, a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area, and a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area.
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Kim Tae Woo
Shim Hee Sung
Dongbu Electronics Co. Ltd.
Green Telly D
McKenna Long & Aldridge LLP
Smith Zandra
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